Design of Bi-Metallic Precursors for Synthesis of Thin Inorganic Metal Oxide Films by Sol Gel Route

Authors

  • Raut Dessai Manjita Kanta  Assistant Professor, Parvatibai Chowgule College, Margao, Goa

Keywords:

Gallium, Indium, Alkoxides, Precursor, TFT, CVD, sol-Gel Route, Nano Particles.

Abstract

Recentlygallium and indium alkoxides are being used as precursors and their applications as gassensors, amorphous oxide semiconductors within thin film transistor (TFT) technology, as photoelectric coatings and as transparent conducting coatings. Thsesealkoxides also act as excellent precursors to their oxides viadecomposition processes, at relatively low temperature, using chemicalvapourdeposition (CVD) to form thin films. At the same timethe synthesis and characterization of nanoparticles display many unique properties like electrical, optical, and magnetic, somewhat different to the bulk system and interesting applications in biology, catalysis, sensors, mechanics and electronics fields. The mixed-oxides were obtained and characterized by a high dispersion of the active phase in the matrix on both molecular and nanometer scale. The versatility of the sol-gel route makes possible to obtain the final material as powders, bulk and coating films. The different metal oxide films were grown using a variety of precursors. The films deposited were not oxygen deficient and little carboncontamination was observed. Thin films of indium gallium oxide, and zinc gallium oxide were alsoproduced.

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International Journal of Scientific Research in Chemistry

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Published

2016-09-30

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Volume 1, Issue 1, September-October-2016

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Research Articles

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[1]
Raut Dessai Manjita Kanta, " Design of Bi-Metallic Precursors for Synthesis of Thin Inorganic Metal Oxide Films by Sol Gel Route, International Journal of Scientific Research in Chemistry(IJSRCH), ISSN : 2456-8457, Volume 1, Issue 1, pp.12-17, September-October-2016.